Charge storage in metal-silicon nitride-silicon capacitors

1 January 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 55 (8) , 1494-1495
https://doi.org/10.1109/proc.1967.5861

Abstract

Charge storage in MNS capacitors is presented as a function of time with temperature as a parameter. Activation energies for shifts of flat-band voltage are found to be 0.02 eV and 0.1 eV for two samples that have different deposition parameters.

Keywords

CAPACITORS
DEGRADATION
SUPERCONDUCTING FILMS
TRANSISTORS
SUPERCONDUCTING MAGNETS
PULSE MEASUREMENTS
SILICON
SUPERCONDUCTIVITY
WRITING
MAGNETIC FLUX

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