Chemical vapor transport of CuInS2: Correlation of growth induced defect structure and photoactivity
- 30 April 1986
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 13 (3) , 221-232
- https://doi.org/10.1016/0165-1633(86)90021-3
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Transient Photoconductivity Profiles of Electrochemical Interfaces: The a‐Si:H Aqueous Electrolyte ContactJournal of the Electrochemical Society, 1985
- The influence of chemical surface alteration on photoresponse of polycrystalline CuInS2 electrodesSurface Science, 1985
- Efficient and stable solar cell by interfacial film formationNature, 1983
- Surface modification of polycrystalline p-CuInS2 and p-CuInSe2 electrodes for improved solar cell performanceSolar Energy Materials, 1983
- Measurements of depletion layers in hydrogenated amorphous siliconPhysical Review B, 1983
- The Phase Relations in the Cu,In,S System and the Growth of CuInS2 Crystals from the MeltJournal of the Electrochemical Society, 1982
- CuInS2 Liquid Junction Solar CellsJournal of the Electrochemical Society, 1978
- The transport flux function — A new method for predicting the rate of chemical transport in flosed systemsJournal of Crystal Growth, 1976
- The transport flux function — A new method for predicting the rate of chemical transport in closed systemsJournal of Crystal Growth, 1976
- Efficient CuInSe2/CdS solar cellsApplied Physics Letters, 1975