Intermixing and shape changes during the formation of InAs self-assembled quantum dots
- 6 October 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (14) , 2014-2016
- https://doi.org/10.1063/1.119772
Abstract
The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy (AFM) images show partially covered island structures with a regular size distribution which are elongated in the [011] direction. Analysis of the AFM profiles show that a large anisotropic redistribution of the island material is taking place during the initial GaAs overgrowth. Short time annealing experiments together with photoluminescence spectroscopy on annealed QDs are consistent with a Ga and In intermixing during the overgrowth. Surface QDs capped with 5 nm or more GaAs show a strong luminescence intensity indicating that surface QDs are remarkably insensitive to surface recombination effects.Keywords
This publication has 18 references indexed in Scilit:
- Control of InAs Self-Assembled Islands on GaAs Vicinal Surfaces by Annealing in Gas-Source Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1997
- Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission MicroscopyPhysical Review Letters, 1996
- State filling and time-resolved photoluminescence of excited states in As/GaAs self-assembled quantum dotsPhysical Review B, 1996
- Direct formation of vertically coupled quantum dots in Stranski-Krastanow growthPhysical Review B, 1996
- Gain and differential gain of single layer InAs/GaAs quantum dot injection lasersApplied Physics Letters, 1996
- InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structurePhysical Review B, 1995
- Calculation of the energy levels in quantum dotsSolid State Communications, 1994
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994