Comments on "A method for determining energy gap narrowing in highly doped semiconductors"

1 January 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (1) , 123-124
https://doi.org/10.1109/T-ED.1984.21486

Abstract

The narrow temperature range used by Neugroschel et al. [1] in their determination of bandgap shrinkage in heavily doped Si leads them to overestimate this parameter by neglecting its temperature dependence. Appropriate manipulation of their data results in values in better agreement with literature.

Keywords

TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
HIGHLY DOPED
DOPED SI
HEAVILY DOPED
GAP NARROWING
DATA RESULTS
NARROW TEMPERATURE
BANDGAP SHRINKAGE
RANGE USED