Changes of infrared absorption by light soaking and thermal quenching in a-Si : H
- 31 December 1997
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 49 (1-4) , 13-18
- https://doi.org/10.1016/s0927-0248(97)00170-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Photo-induced structural changes associated with the Staebler-Wronski effect in hydrogenated amorphous siliconSolid State Communications, 1995
- Evidence for Light-Induced Increase of Si-H Bonds in Undoped-Si: HPhysical Review Letters, 1995
- Evidence of light-induced bond breaking in hydrogenated amorphous siliconApplied Physics Letters, 1986
- Chapter 3 Optical Properties of Defect States in a-Si: HPublished by Elsevier ,1984
- Stability of n-i-p amorphous silicon solar cellsApplied Physics Letters, 1981
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous SiliconJapanese Journal of Applied Physics, 1980
- Fatigue effect in luminescence of glow discharge amorphous silicon at low temperaturesSolid State Communications, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977