Collector-emitter offset voltage in single- and double-base InGaAs(P)/InP heterojunction bipolar transistors

This publication has 8 references indexed in Scilit:

• The fabrication and study of InGaAsP/InP double-collector heterojunction bipolar transistors
  Solid-State Electronics, 1991
• Numerical study of emitter-base junction design for AlGaAs/GaAs heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1988
• Symmetric-gain, zero-offset, self-aligned, and refractory-contact double HBT's
  IEEE Electron Device Letters, 1987
• Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors
  Applied Physics Letters, 1985
• An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1984
• Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor
  Applied Physics Letters, 1984
• Double heterojunction Al_xGa_1-xAs/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650
  IEEE Electron Device Letters, 1983
• Heterostructure bipolar transistors: What should we build?
  Journal of Vacuum Science & Technology B, 1983