A study of Class C operation of GaAs power HBTs
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High voltage operation in class B GaAs X-band power MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-efficiency, class-B, S-band power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Relationship between power added efficiency and gate-drain avalanche in GaAs m.e.s.f.e.t.sElectronics Letters, 1980