Uniform and rapid nucleation of diamond via bias-assisted hot filament chemical vapor deposition
- 31 January 1998
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 13 (1) , 126-130
- https://doi.org/10.1557/jmr.1998.0017
Abstract
A new method was developed to obtain high density, uniform diamond nuclei via bias-assisted hot filament chemical vapor deposition. A negative bias was applied between a mesh (installed above the filament) and the substrate to produce abundant uniform ions at the growth surface. Raman spectroscopy, scanning electron microscopy, and Auger electron microscopy were used to analyze the films obtained. The results show that a layer of diamond film with a nucleation density of 109/cm2 can be obtained after 10 min deposition under 1 Torr.Keywords
This publication has 13 references indexed in Scilit:
- Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substratesJournal of Materials Research, 1995
- Nucleation and selected area deposition of diamond by biased hot filament chemical vapor depositionJournal of Materials Research, 1995
- Nucleation and initial growth phase of diamond thin films on (100) siliconPhysical Review B, 1994
- Plasma-Enhanced Diamond Nucleation on SiJapanese Journal of Applied Physics, 1994
- Epitaxial diamond thin films on (001) silicon substratesApplied Physics Letters, 1993
- Synthesis of diamond from methane and nitrogen mixtureApplied Physics Letters, 1993
- Nucleation mechanisms of diamond in plasma chemical vapor depositionDiamond and Related Materials, 1993
- Characterization of bias-enhanced nucleation of diamond on silicon byinvacuosurface analysis and transmission electron microscopyPhysical Review B, 1992
- Generation of diamond nuclei by electric field in plasma chemical vapor depositionApplied Physics Letters, 1991
- Quantum photoyield of diamond(111)—A stable negative-affinity emitterPhysical Review B, 1979