AlGaAs/GaInAs strained-base pnp heterojunction bipolar transistors

20 July 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (15) , 993-994
https://doi.org/10.1049/el:19890664

Abstract

We report the first strained-layer pnp heterojunction bipolar transistors fabricated in the AlGaAs/GaInAs/GaAs system. Despite significant lattice mismatch between the Ga_0.9In_0.1As base layer and AlGaAs emitter, the current gain was comparable to that of similar AlGaAs/GaAs transistors. A maximum gain of 35 was observed for a device with graded In content across the base.

Keywords

HETEROJUNCTION BIPOLAR TRANSISTORS
STRAINED-BASE
LATTICE MISMATCH
GRADED IN CONTENT
SEMICONDUCTORS
STRAINED-LAYER
ALGAAS-GAINAS-GAAS
CURRENT GAIN
STRAINED BASE PNP HBT

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