Alteration of Ni silicide formation by N implantation
- 15 January 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (2) , 106-108
- https://doi.org/10.1063/1.92259
Abstract
The possibility of controlling the growth of nickel silicide by implanting N into thin Ni films evaporated on Si substrates has been studied using 4He backscattering spectrometry. The reaction between Ni and Si is completely halted below annealing temperatures of ∼375 °C by implanted doses of 5×1016 N/cm2. At higher annealing temperatures, localized intermixing takes place. For low doses ≲0.5×1016 N/cm2, the reaction between Ni and Si is that observed for unimplanted samples both in the phase formed (Ni2Si) and in rate of growth. For intermediate doses ∼0.9×1016 N/cm2, the first phase formed corresponds to NiSi, and the growth rate is greatly reduced. These results are explained in terms of a silicon nitride barrier to Ni diffusion forming at the Ni/Si interface.Keywords
This publication has 2 references indexed in Scilit:
- On the formation of Ni and Pt silicide first phase: The dominant role of reaction kineticsApplied Physics Letters, 1978
- Influence of the nature of the Si substrate on nickel silicide formed from thin Ni filmsThin Solid Films, 1976