Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

Preprint

26 January 2002

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0201492

Abstract

Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is suppressed when the Mn dose is increased or decreased away from the 3 at.% value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of one Bohr magneton, and the spin wave stiffness inferred from the Bloch-law T^3/2 dependence of the magnetization provides an estimate Tc = 385K of the Curie temperature that exceeds the experimental value, Tc = 270K. The presence of ferromagnetic clusters and hysteresis to temperatures of at least 330K is attributed to disorder and proximity to a metal-insulating transition.

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Version 1, 2002-01-26, ArXiv
Published version: Physical Review Letters, 89 (10), 107203.

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