Ion channeling measurement of the lattice registry of ultrathin ErAs layers in GaAs/ErAs/GaAs (001) heterostructures
- 1 May 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 56-57, 792-794
- https://doi.org/10.1016/0168-583x(91)95029-d
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Microstructure of epitactically grown GaAs/ErAs/GaAsApplied Physics Letters, 1990
- Growth of epitaxial rare-earth arsenide/(100)GaAs and GaAs/rare-earth arsenide/(100)GaAs structuresJournal of Vacuum Science & Technology B, 1989
- Epitaxial growth of ErAs on (100)GaAsApplied Physics Letters, 1988
- Epitaxial growth of GaAs/NiAl/GaAs heterostructuresApplied Physics Letters, 1988