Metalorganic vapour phase epitaxy growth of InGaAs/GaAs strained layer quantum wells beyond the pseudomorphic limit
- 1 June 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 130 (3-4) , 490-494
- https://doi.org/10.1016/0022-0248(93)90537-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Strained-layer quantum well heterostructure lasersThin Solid Films, 1992
- Long-wavelength (1.3 μm) luminescence in InGaAs strained quantum-well structures grown on GaAsApplied Physics Letters, 1991
- Reduction in linewidth enhancement factor for In0.2Ga0.8As/ GaAs/Al0.5Ga0.5As strained quantum well lasersApplied Physics Letters, 1991