Characterization of phosphorous doped silicon by infrared reflectivity

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Abstract
A theoretical study of the propagation of E.M. waves in inhomogeneous media has been used to determine the profile of the free carrier concentration in semiconductors, with the aid of infrared reflectivity curves. The doping of the semiconductor was done by implantation. The profile of free carriers was approximated by a deformed Gaussian, whose parameters were found by comparison of the experimental and theoretical coefficients of reflectivity. The sensitivity of the reflectivity curve to the different parameters of the Gaussian was investigated. This method seems to be well adopted to the study of the heavily doped semiconductors (implanation doses greater than 1014 cm−2 for energy about 100 KeV).

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