Carbon-containing group IV heterostructures on Si: properties and device applications
- 1 May 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 321 (1-2) , 11-14
- https://doi.org/10.1016/s0040-6090(98)00435-0
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Theory of strain and electronic structure of and alloysPhysical Review B, 1998
- Strain relaxation in tensile-strained layers on Si(001)Semiconductor Science and Technology, 1996
- Critical points of Si1−yCy and Si1−x−yGexCy layers strained pseudomorphically on Si(001)Journal of Applied Physics, 1996
- Near-Band-Edge Photoluminescence from PseudomorphicQuantum Well StructuresPhysical Review Letters, 1996
- Thermal stability of Si/Si1 − x − yGexCy/Si heterostructures grown by rapid thermal chemical vapor depositionJournal of Crystal Growth, 1995
- Growth and properties of strained Si1-x-yGexCylayersSemiconductor Science and Technology, 1995
- Monte Carlo Studies of Ternary Semiconductor Alloys: Application to theSystemPhysical Review Letters, 1995
- Enhanced Solubility of Impurities and Enhanced Diffusion near Crystal SurfacesPhysical Review Letters, 1995
- Lattice distortion in a strain-compensated layer on siliconPhysical Review B, 1994
- Si1-x-yGexCy growth and properties of the ternary systemJournal of Crystal Growth, 1993