Buried transverse-junction stripe laser for optoelectronic-integrated circuits
- 15 May 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (10) , 4933-4935
- https://doi.org/10.1063/1.338313
Abstract
A buried transverse-junction stripe (TJS) laser, a suitable laser diode for integration, has been fabricated using molecular-beam epitaxial growth. The fundamental characteristics of the laser were as good as those of a conventional TJS laser. We have also demonstrated a fabrication process for the laser that is compatible with that for metal-semiconductor field-effect transistors (MESFETs) to be monolithically integrated. The characteristics of the MESFETs fabricated on substrates processed for the laser were the same as those fabricated on virgin substrates when such processed substrates were etched 2 μm deep.This publication has 3 references indexed in Scilit:
- Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrateApplied Physics Letters, 1985
- Transverse junction stripe lasers using Si-doped GaAs/AlGaAs grown by MBEElectronics Letters, 1984
- Si-doped GaAs/AlGaAs TJS laser by MBEJournal of Vacuum Science & Technology B, 1984