The sources for contaminants in the trace analysis of carbon in GaAs by secondary ion mass spectrometry

1 January 1988

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 6 (1) , 86-92
https://doi.org/10.1116/1.574974

Abstract

We have studied the sources for contaminants in the trace analysis of carbon in GaAs by secondary ion mass spectrometry (SIMS). The results suggest that the detectivity of carbon is mainly limited by the ionization of carbon-containing molecules in the residual gases by the primary ion beam and/or the memory effect rather than the deposition of these molecules onto the sample surface. The model for the quantitative analysis of carbon in GaAs by SIMS is presented. The detection limit of carbon is (1–2)×1015 cm−3. The possibility is also presented to achieve the detection limit of middle 1014 cm−3 by SIMS even at the conventional vacuum pressure (∼1×10−9 Torr).

Keywords

This publication has 0 references indexed in Scilit: