Effects of composition profile on characteristics of GaAs–Ga1−xAlxAs double-heterostructure lasers
- 1 June 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (6) , 2688-2689
- https://doi.org/10.1063/1.1662634
Abstract
Electron probe x-ray microanalysis was used to measure the composition profile in the active layers of GaAs–Ga1−xAlxAs double-heterostructure wafers along the growth direction. The threshold current density and the lasing wavelength of the double-heterostructure laser were found to be consistently affected by the composition profile in the active layer.This publication has 3 references indexed in Scilit:
- Reproducible Liquid-Phase-Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser DiodesJournal of Applied Physics, 1972
- GaAs–AlxGa1−xAs Double Heterostructure Injection LasersJournal of Applied Physics, 1971
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971