Charge-Control Equivalent Circuit for Predicting Transient Radiation Effects in Transistors

Abstract
A charge-control equivalent circuit is developed in detail which can be used with a computer to predict the time-dependent response of any transistor to a pulse of ionizing radiation. Operation of the equivalent circuit during saturation is also provided. Measurement procedures are described for each of the necessary parameters in the circuit and comparison with experimental flash X-ray data is presented. Use of this transistor representation is demonstrated for predicting the response of a complete transistorized amplifier circuit.

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