Control of efficiency of photon energy up-conversion in CdSe/ZnS quantum dots
- 1 June 2003
- journal article
- Published by Pleiades Publishing Ltd in Optics and Spectroscopy
- Vol. 94 (6) , 859-863
- https://doi.org/10.1134/1.1586736
Abstract
Efficient photoluminescence (PL) up-conversion in CdSe/ZnS quantum dots prepared by an organometallic approach is reported. It is demonstrated that the efficiency of photon energy up-conversion and the magnitude of the spectral shift can be controlled by (i) the thickness of the ZnS layers, (ii) the temperature dependence of the excited-state absorption coefficient, and (iii) the dependence on the excitation intensity. From the analysis of the experimental data, it is proposed that intrinsic gap states are involved as intermediate states in the PL up-conversion, rather than nonlinear two-photon absorption or Auger processes.Keywords
This publication has 24 references indexed in Scilit:
- Anti-Stokes Photoluminescence in II-VI Colloidal NanocrystalsPhysica Status Solidi (b), 2002
- Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystalsOptical Materials, 2001
- Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dotsApplied Physics Letters, 2000
- Luminescence, energy transfer and anti-Stokes PL in wide band-gap semimagnetic nanostructuresJournal of Luminescence, 2000
- Giant anti-Stokes photoluminescence from semimagnetic heterostructuresPhysical Review B, 1999
- Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric currentPhysical Review B, 1999
- Anti-Stokes photoluminescence in colloidal semiconductor quantum dotsApplied Physics Letters, 1999
- Anti-Stokes luminescence in chromium-doped ZnSePhysical Review B, 1996
- Deep center EL2 and anti-Stokes luminescence in semi-insulating GaAsApplied Physics Letters, 1982
- Anti-Stokes Exciton Emission in CdS CrystalsPublished by Springer Nature ,1973