Dual-wavelength laser annealing

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Abstract
A simple and efficient method of annealing ion‐implantation damage in semiconductors is demonstrated which utilizes a relatively weak optical pulse in the visible to initiate surface melting in combination with a more energetic infrared pulse to drive in the melt front to the crystalline substrate. The efficacy of this approach is illustrated by an example in which an arsenic‐implanted silicon crystal is simultaneously exposed to 530‐ and 1060‐nm pulses. The results are discussed in relation to theoretical estimates of the melting thresholds at the two wavelengths.