Electrostatically defined heterojunction rings and the Aharonov–Bohm effect
- 2 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (1) , 21-23
- https://doi.org/10.1063/1.100818
Abstract
Micron-sized loops of high-mobility two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures using a novel split-gate technique. Aharonov–Bohm oscillations of amplitude up to 20% of the device resistance have been observed at very low temperatures (T<100 mK), together with h/2e oscillations which appear to be due to interference between pairs of time-reversed paths near B=0. The h/e period is found to vary by ∼25% with magnetic field, possibly as a result of the formation of edge states. In the quantum Hall effect, plateaus in Rxx are seen at high B due to variations in carrier concentration across the ring, which may cause backscattering of some edge states.Keywords
This publication has 15 references indexed in Scilit:
- Transport in GaAs heterojunction ring structuresSuperlattices and Microstructures, 1988
- Absence of backscattering in the quantum Hall effect in multiprobe conductorsPhysical Review B, 1988
- Vanishing hall voltage in a quasi-one-dimensionalheterojunctionPhysical Review B, 1988
- Universal conductance fluctuations in metals: Effects of finite temperature, interactions, and magnetic fieldPhysical Review B, 1987
- Four-Terminal Phase-Coherent ConductancePhysical Review Letters, 1986
- One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs HeterojunctionPhysical Review Letters, 1986
- Aharonov-Bohm effect in normal metal quantum coherence and transportAdvances in Physics, 1986
- Generalized many-channel conductance formula with application to small ringsPhysical Review B, 1985
- Quantum Oscillations and the Aharonov-Bohm Effect for Parallel ResistorsPhysical Review Letters, 1984
- Physical interpretation of weak localization: A time-of-flight experiment with conduction electronsPhysical Review B, 1983