Thermally Activated Oxygen Donors In Si

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Abstract
The origin and distribution of thermal donors (activated at 450°C) in Czochralski‐grown Si crystals were investigated on a microscale. Interstitial oxygen concentration profiles were obtained by scanning infrared absorption and were correlated to concentration profiles of the thermal donors determined by high resolution spreading resistance measurements on the identical locations of the oxygen concentration profiles. In addition, the distribution of microdefects (A‐ and B‐type) was determined, before and after thermal activation, by high resolution etching. In contrast to prevailing views, it was found that the thermal donor concentration is not an explicit function of the oxygen concentration. Microdefects were found to be intimately related to the thermal donor activation. It was concluded that the formation of vacancy‐oxygen complexes constitutes the initial stage of the activation of thermal donors at 450°C.

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