Disordering of Ga 0.47 In 0.53 As/InP multiple quantum well layers by sulphur diffusion
- 15 September 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (19) , 1217-1218
- https://doi.org/10.1049/el:19880827
Abstract
The disordering of Ga0.47In0.53As/InP MQW layers by the diffusion of sulphur is reported for the first time. Photoluminescence measurements indicate that this results in a larger bandgap material. SIMS profiles show that intermixing of both group III and V elements occurs between wells and barriers.Keywords
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