Resonant tunnelling studies of magnetoelectric quantisation in wide quantum wells
- 24 July 1989
- journal article
- letter
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 1 (29) , 4865-4871
- https://doi.org/10.1088/0953-8984/1/29/014
Abstract
Resonant tunnelling in n-type GaAs-(AlGa)As double-barrier heterostructures with wide quantum wells is investigated as a function of magnetic field applied in the plane of the tunnel barriers. The evolution of the resonances in the current-voltage characteristics with magnetic field is used to study the transition from electric to magnetic confinement of electrons in the quantum well.Keywords
This publication has 7 references indexed in Scilit:
- Ballistic transport in resonant tunnelling devices with wide quantum wellsJournal of Physics: Condensed Matter, 1989
- Resonant tunneling in a transverse magnetic field: Transition from the electric to the magnetic quantum limitPhysical Review B, 1989
- Transverse magnetic field dependence of the current-voltage characteristics of double-barrier quantum well tunneling structuresApplied Physics Letters, 1988
- Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)AsSolid-State Electronics, 1988
- Magnetic Field Studies of Resonant and Non-resonant Tunnelling in n-(AlGa)As/GaAs Double Barrier StructuresPublished by Springer Nature ,1988
- Observations of Magnetoquantized Interface States by Electron Tunneling in Single-Barrier HeterostructuresPhysical Review Letters, 1987
- Magnetotransport in semiconductor superlatticesSemiconductor Science and Technology, 1987