On the growth of CuInS2 thin films by three-source evaporation
- 1 January 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 168 (1) , 113-122
- https://doi.org/10.1016/0040-6090(89)90694-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Defect identification in undoped and phosphorus-doped CuInS2 based on deviations from ideal chemical formulaJournal of Applied Physics, 1987
- Modulation reflectance spectra of CuInS2Physics Letters A, 1983
- The substrate heating effects on ion-beam sputter-deposited CuInS2 and GaP thin filmsApplications of Surface Science, 1982
- Luminescence and lattice defects in Cu In S2Journal of Physics and Chemistry of Solids, 1981
- On the preparation of CuInS2 thin films by flash evaporationSolar Energy Materials, 1980
- Growth and properties of sputter-deposited CuInS2 thin filmsThin Solid Films, 1980
- The region of existence of CuInS2Materials Research Bulletin, 1979
- Growth and properties of vacuum deposited CuInSe2 thin filmsJournal of Vacuum Science and Technology, 1976
- CuInS2 thin films: Preparation and propertiesJournal of Applied Physics, 1975
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956