New Route to Fabricate Ferromagnetic Semiconductors without Transition Metal Elements
- 1 April 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 43 (4B) , L579-581
- https://doi.org/10.1143/jjap.43.l579
Abstract
We propose a new route for ferromagnetic diluted magnetic semiconductors by controlling the impurity-band width (W) and the electron-correlation energy (U) in the partially occupied impurity band in the condition of highly correlated electron system (U>W). Based upon first-principles calculations of K2(S,Si) and K2(S,Ge), we demonstrate that transparent, half-metallic and room-temperature ferromagnetic DMS could be designed even without transition metal elements. The results show that it is possible to fabricate the room-temperature ferromagnets in K2(S,Si) and K2(S,Ge) around 8 at%-impurity concentration.Keywords
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