PHONON BROADENING OF IMPURITY SPECTRAL LINES: III. DIAGRAM TECHNIQUE

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Abstract
The theory of the phonon broadening of optical absorption lines associated with impurities in semiconductors is discussed, using the diagram technique for the evaluation of an appropriate two-particle temperature Green's function. The single-particle propagator for an electron moving in the impurity potential and simultaneously in interaction with the phonons is calculated and used. The interaction with the phonons is treated as weak. The line-shape function is found, and a comparison is made between this method of calculation and a previous one based on the decoupling of an infinite hierarchy of equations for double-time temperature-dependent Green's functions.