Doping of semi-insulating and n-type GaAs by neutron transmutation
- 1 June 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (6) , 3178-3180
- https://doi.org/10.1063/1.328068
Abstract
By bombarding GaAs wafers with thermal neutrons it has been possible to introduce a specific constant donor concentration. The radiation damage caused by bombardment can be annealed at temperatures below 800 °C. A room temperature electron mobility of 3900 cm2/Vs has been achieved at an impurity concentration of 5×1017 cm−3. The doping of n−-type layers shows, in addition to the expected doping effect, that the n−-type layer is compensated near the semi-insulating substrate.This publication has 3 references indexed in Scilit:
- Magneto-optical study of shallow donors in transmutation-doped GaAsJournal of Physics and Chemistry of Solids, 1978
- Contact size effects on the van der Pauw method for resistivity and Hall coefficient measurementSolid-State Electronics, 1974
- Electrochemical technique for the continuous automatic plotting of semiconductor donor concentration over large depthsElectronics Letters, 1974