Double boron implant short-channel MOSFET

1 March 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (3) , 196-204
https://doi.org/10.1109/t-ed.1977.18709

Abstract

Threshold voltage and current-voltage characteristics are presented for a double boron-ion-implanted-n-channel enhancement MOSFET device for high speed logic circuit applications. A 15-Ω. cm-high resistivity p-type

Keywords

BORON
MOSFET
THRESHOLD
SPEED
CIRCUIT
OMEGA
DOUBLE
IMPLANTED
CURRENT VOLTAGE