Fabrication of an InGaAs single quantum well circular ring laser by direct laser patterning
- 15 May 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (20) , 2608-2610
- https://doi.org/10.1063/1.113099
Abstract
The fabrication of single quantum well(SQW) ridge waveguide ring laser in strained InGaAs is described which utilizes direct‐write laser lithography followed by cryogenicUV laser‐assisted etching. The laser has a threshold current of 270 mA and emits ∼14 mW of single‐frequency output.Keywords
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