Optical Properties due to Donor Electrons in Semiconductors
- 1 May 1965
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 20 (5) , 735-742
- https://doi.org/10.1143/jpsj.20.735
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Electric Susceptibility of Impurity Electrons in SemiconductorsJournal of the Physics Society Japan, 1965
- Infrared Absorption of Semiconductor at Low TemperaturesJournal of the Physics Society Japan, 1964
- Faraday effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- Optical absorption in n-type gallium phosphideJournal of Physics and Chemistry of Solids, 1959
- The Faraday effect in semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Infrared Absorption in-Type SiliconPhysical Review B, 1957