Calculation of I / V characteristics for ion-implanted GaAs MESFETs
- 4 March 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (5) , 208-210
- https://doi.org/10.1049/el:19820143
Abstract
The DC characteristics of an ion-implanted MESFET have been calculated from theoretical and measured carrier concentration profiles. The calculation allows the determination of characteristics for planar or recessed gate structures and shows good agreement with experimental devices.Keywords
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