Abstract
YBa2Cu3O x thin films have been synthesized on MgO and Y-stabilized ZrO2 (YSZ) by multilayer deposition followed by annealing in oxygen. From Rutherford backscattering spectroscopy, it has been shown that interdiffusion among the layers occurs and then uniform YBa2Cu3O x films are formed by annealing at 900°C for 10 min. The YBa2Cu3O x phase grows with (001)-preferential orientation parallel to the substrate surface. For the films on YSZ, a zero-resistance temperature above 77 K has been achieved.