Low-threshold high-speed 1.55 μm vapour phase transported buried heterostructure lasers (VPTBH)

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Abstract
A new 1.55 μm InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ∼4.5 GHz.