State of the art 1.3 μm lasers by atmospheric pressure MOVPE using tertiary butylphosphine

23 May 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (11) , 1005-1006
https://doi.org/10.1049/el:19910626

Abstract

Excellent 1.3 micrometre laser devices were realised for the first time with active light-emitting layers grown from the alternative phosphorous precursor TBP instead of phosphine. A wider temperature range than previously reported was explored for growth under TBP. The replacement of phosphine appears entirely feasible, albeit expensive.

Keywords

TBP
ATMOSPHERIC PRESSURE MOVPE
TERTIARY BUTYLPHOSPHINE
1.3 MICRON
SEMICONDUCTOR LASERS
ACTIVE LIGHT-EMITTING LAYERS

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