Heat Treatment of Semi-Conductors and Contact Rectification

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Abstract
It is suggested that the heat treatment results in the formation of a layer low in impurity concentration near the surface of the semi-conductor. This is the result of a rapid evaporation of impurity atoms from the surface and a slower influx by diffusion from the interior. The conditions for the formation of this layer are discussed, and an expression for the ratio of the evaporation coefficient to the diffusion coefficient is derived. The effect of the depleted layer on the electrical characteristics of a semi-conductor-metal rectifying contact are calculated on the basis of the diode theory of rectification; and it is shown that the heat treatment results in increased back resistance and decreased contact capacity. The effect of these changes on the efficiency of rectification is discussed.

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