Self-organized fabrication of planar GaAs nanowhisker arrays
- 15 July 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (3) , 386-387
- https://doi.org/10.1063/1.118069
Abstract
GaAs lateral nanowhiskers are grown on the side wall of a ridge formed on a GaAs substrate. The growth positions of the lateral nanowhiskers are controlled by a technique based on electron beam lithography. Also, lateral nanowhiskers bridging between two parallel wall surfaces are grown. These methods are potentially applicable to the fabrication of planar-type quantum functional devices.Keywords
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