High-voltage two-dimensional simulations of permeable base transistors
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (1) , 52-60
- https://doi.org/10.1109/t-ed.1983.21071
Abstract
Numerical solutions to the two-dimensional Poisson's equation and the continuity equation have been used to investigate the high-voltage performance of the permeable base transistor (PBT). The device avalanche voltage is found to be approximately 20 percent below that of the bulk material and the unity short-circuit current gain frequency fTis shown to decrease rapidly with increasing collector-to-emitter voltage. The PBT is well suited for use as a class C power device at frequencies well into the millimeter-wave region. Results are presented for both silicon and GaAs devices.Keywords
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