Reactive Ion Etching of Silicon Containing Polynorbornenes

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Abstract
Silyl ether modified polynorbornene is a new class of dielectric polymer materials of interest in electronic packaging and other applications. This work is focused on the reactive ion etching of polynorbornenes in oxygen, oxygen/fluoroform, and oxygen/fluoroform/argon plasmas. The etch rate, amount and nature of the residue, and etch undercut rate have been investigated for different plasma parameters, such as pressure, plasma power, and gas composition. X‐ray photoelectron spectroscopy and scanning electron microscopy were used to characterize the residue. Several techniques were used to reduce the etch residue and undercut.

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