Leakage current characteristics of offset-gate-structure polycrystalline-Silicon MOSFET's
- 1 September 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (9) , 434-436
- https://doi.org/10.1109/edl.1987.26684
Abstract
Leakage current characteristics of offset-gate-structure polycrystalline-silicon (poly-Si) MOSFET's are studied as a function of dopant concentration Noffin offset-gate regions. Leakage current markedly decreases from 1 × 10-9to 2 × 10-11A at VD= 10 V as Noffis varied from 1 × 1018to 1 × 1017cm-3. A maximum ON/OFF current ratio of 108is obtained at 1 × 1017cm-3. Calculations based on a quasi-two-dimensional model indicate that the reduction of leakage current is attributable to a decrease of the maximum lateral electric field strength in the drain depletion region. An analysis of the leakage current characteristics in terms of carrier emission from grain-boundary traps implies that thermonic emission accompanied by thermally assisted tunneling could be the dominant mechanism in determining leakage current.Keywords
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