Characterization of bulk negative-resistance diode behavior
- 1 September 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 14 (9) , 461-463
- https://doi.org/10.1109/T-ED.1967.15988
Abstract
Over certain ranges of frequency, bulk negative-resistance diodes can act as amplifiers or as oscillators depending on the doping, length between contacts, and external circuit. This behavior can be divided into four classes: Gunn oscillation, stable amplification, LSA oscillation, and bias-circuit oscillation. The four classes of behavior are discussed generally with references to the more detailed papers within this issue.Keywords
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