Lateral Unidirectional Bipolar-Type Insulated-Gate Transistors

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Abstract
A lateral unidirectional bipolar-type insulated-gate transistor (Lubistor) is proposed which has a lateral p +-n-n + (or n +-p-p +) diode structure on the top of the insulator and in which the insulated gate is aligned in the n (or p) region and the thickness of the n (or p) region is less than the effective Debye length. It is shown that anode current properties of Lubistor are ruled by the thin conductive layer potential beneath the gate, and that the anode current density approaches the order of 105 A/cm2. It is speculated that the anode current of the Lubistor is based on the recombination current of minority carriers in the thin conductive layer. It is verified that the “OFF” state of Lubistor is achievable only under the condition that the channel region is thinner than the effective Debye length.

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