InP/Al 2 O 3 n -channel inversion-mode m.i.s.f.e.t.s using sulphur-diffused source and drain
- 2 August 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (16) , 502-503
- https://doi.org/10.1049/el:19790363
Abstract
InP metal-insulator-semiconductor field-effect transistors (m.i.s.f.e.t.s) have been fabricated using c.v.d. Al2O3 as the gate insulator and the sulphur-diffusion process for source and drain. The n-channel inversion-mode device exhibits normally off behaviour. A maximum d.c. transconductance gm of 10 mS (87 mS/mm of gate width) has been obtained.Keywords
This publication has 0 references indexed in Scilit: