Cd 2 + ∕ N H 3 treatment-induced formation of a CdSe surface layer on CuGaSe2 thin-film solar cell absorbers
- 25 May 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (22)
- https://doi.org/10.1063/1.1942638
Abstract
Cu Ga Se 2 (CGSe)-based high-gap thin-film solar cells have to date not reached their potential level of electrical performance. In order to elucidate possible shortcomings of the electronic interface structure, we have studied the initial stage of the CdS∕CGSe interface formation by use of a simple Cd2+∕NH3 treatment. As in the case of low-gap chalcopyrites, we find a Cd-containing surface layer, in the present case comprised of approximately one monolayer of CdSe. The results indicate that the CdS∕CGSe interface is not abrupt, but contains intermediate layers. Furthermore, they shed light on possible surface modification schemes to enhance the overall performance of high-gap CGSe chalcopyrite solar cells.Keywords
This publication has 9 references indexed in Scilit:
- Native oxidation ofcrystals and thin films studied by electron paramagnetic resonance and photoelectron spectroscopyPhysical Review B, 2004
- CuGaSe2 thin films prepared by a novel CCSVT technique for photovoltaic applicationThin Solid Films, 2004
- Surface and bulk properties of CuGaSe2 thin filmsJournal of Physics and Chemistry of Solids, 2003
- CdS and Cd(OH)2 formation during Cd treatments of Cu(In,Ga)(S,Se)2 thin-film solar cell absorbersApplied Physics Letters, 2003
- Analysis of Zinc Compound Buffer Layers in Cu(In, Ga)(S, Se)2 Thin Film Solar Cells by Synchrotron-Based Soft X-Ray SpectroscopyMRS Proceedings, 2003
- ILGAR‐ZnO Window Extension Layer: an adequate substitution of the conventional CBD‐CdS buffer in Cu(In,Ga) (S,Se)2‐based solar cells with superior device performanceProgress In Photovoltaics, 2001
- ILGAR technology IV:: ILGAR thin film technology extended to metal oxidesSolar Energy Materials and Solar Cells, 2001
- Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2Journal of Applied Physics, 1993
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979