Planar 3 × 3 array of GaInAs/InP MQW surface optical modulators grown by gas-source MBE
- 8 December 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (25) , 1583-1584
- https://doi.org/10.1049/el:19881079
Abstract
Planar two-dimensional semiconductor arrays of optical modulators operating in the region of 1.55μm are reported for the first time. A process is described which uses MBE-grown GaInAs/InP MQW layers, and which gives a high yield of small, low-leakage optical modulators with an absorption change in each device of 3 dB for an applied bias of −30 V.Keywords
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