Electron irradiation and adhesion at silicon-gold interfaces prepared under ultra high vacuum conditions
- 2 April 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 169 (2-3) , L355-L361
- https://doi.org/10.1016/0039-6028(86)90606-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Influence of an electric field on beam-induced adhesion enhancementApplied Physics Letters, 1984
- Enhancement of thin metallic film adhesion following vacuum ultraviolet irradiationApplied Physics Letters, 1984
- Nucleation and growth of thin filmsReports on Progress in Physics, 1984
- Thin-film adhesion changes induced by electron irradiationApplied Physics Letters, 1984
- Low-energy electron-loss spectroscopy and Auger-electron-spectroscopy studies of noble-metal—silicon interfaces: Si-Au systemPhysical Review B, 1982
- Ion-beam-enhanced adhesion in the electronic stopping regionNuclear Instruments and Methods in Physics Research, 1982
- Electron energy loss measurements on the gold-silicon interface.Journal de Physique Lettres, 1980
- Photoemission studies of the silicon-gold interfacePhysical Review B, 1979
- Cohesive energy of the two-dimensional Si(111)3 × 1 Ag and Si(111)√3-R(30°)Ag phases of the Silver (deposit)-silicon(111) (substrate) systemSurface Science, 1978