Actively mode-locked 1.3 and 1.55 ?m InGaAsP diode lasers
- 1 November 1991
- journal article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 23 (9) , 1169-1177
- https://doi.org/10.1007/bf00619984
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Actively mode-locked semiconductor lasersIEEE Journal of Quantum Electronics, 1989
- Actively mode-locked GaInAsP laser with subpicosecond outputApplied Physics Letters, 1988
- Active mode-locking characteristics of InGaAsP-single mode fiber composite cavity lasersIEEE Journal of Quantum Electronics, 1986
- Bandwidth-limited picosecond pulses from an injection GaAlAs DH laser with an external dispersive cavityIEEE Journal of Quantum Electronics, 1985
- 20 GHz active mode-locking of a 1.55 μm InGaAsP laserElectronics Letters, 1985
- Mode locking of Brewster-angled semiconductor lasersElectronics Letters, 1982
- Picosecond pulse generation from a synchronously pumped mode-locked semiconductor laser diodeApplied Physics Letters, 1982
- Active mode locking of linear and ring external-cavity semiconductor lasersIEEE Journal of Quantum Electronics, 1981
- Active mode locking of double heterostructure lasers in an external cavityJournal of Applied Physics, 1981
- Picosecond pulse generation with a cw GaAlAs laser diodeApplied Physics Letters, 1978