Organic Vapor Sensitivity In A Porous Silicon Device
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 890-893
- https://doi.org/10.1109/sensor.1995.717376
Abstract
Organic vapor sensitive device using anodized porous silicon has been developed. The device consists of two pn junctions surrounded with the porous silicon layer as a vapor sensing element. The devices show an increase of current for exposure to thousands ppm of organic vapor at room temperature. A high sensitivity is observed for ethanol vapor. It is discussed that the adsorption of polar molecules induces a "soft" breakdown in the reverse biased pn junction.Keywords
This publication has 1 reference indexed in Scilit:
- Adsorbate effects on photoluminescence and electrical conductivity of porous siliconApplied Physics Letters, 1994