Fabrication and electroluminescence of double-layered organic light-emitting diodes with the Al2O3/Al cathode
- 10 March 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (10) , 1233-1235
- https://doi.org/10.1063/1.118539
Abstract
The effects of a controlled Al 2 O 3 buffer layer on the behavior of highly efficient vacuum evaporated aqua regia-treated indiumtin oxide (ITO)/triphenyl diamine (TPD)/8-tris-hydroxyquino-line aluminum Alq 3 /Al 2 O 3 /Al light-emitting diodes are described. It is found that, with a buffer layer of suitable thickness, both current injection and electroluminescence output are significantly enhanced. The enhancement is believed to be due to increased charge carrier density near the TPD/Alq 3 interface that results from enhanced electron tunneling, and removal of exciton-quenching gap states that are intrinsic to the Alq 3 /Al interface.Keywords
This publication has 25 references indexed in Scilit:
- Highly efficient electroluminescence of new wide band gap ladder-type poly(para-phenylenes)Applied Physics Letters, 1996
- Light-emitting diodes with variable colours from polymer blendsNature, 1994
- Carrier tunneling and device characteristics in polymer light-emitting diodesJournal of Applied Physics, 1994
- Efficient light-emitting diodes based on polymers with high electron affinitiesNature, 1993
- Flexible light-emitting diodes made from soluble conducting polymersNature, 1992
- Light-emitting diodes based on conjugated polymersNature, 1990
- Confinement of charge carriers and molecular excitons within 5-nm-thick emitter layer in organic electroluminescent devices with a double heterostructureApplied Physics Letters, 1990
- Electroluminescence of doped organic thin filmsJournal of Applied Physics, 1989
- Organic Electroluminescent Device with a Three-Layer StructureJapanese Journal of Applied Physics, 1988
- Organic electroluminescent diodesApplied Physics Letters, 1987